User profiles for F. M. Healy

Brendan FM Healy

University of Warwick
Verified email at warwick.ac.uk
Cited by 9

The importance of Ras in drug resistance in cancer

FM Healy, IA Prior, DJ MacEwan - British Journal of …, 2022 - Wiley Online Library
In this review, we analyse the impact of oncogenic Ras mutations in mediating cancer drug
resistance and the progress made in the abrogation of this resistance, through …

[HTML][HTML] Worked to the bone: antibody-based conditioning as the future of transplant biology

JM Griffin, FM Healy, LN Dahal, Y Floisand… - Journal of Hematology & …, 2022 - Springer
Conditioning of the bone marrow prior to haematopoietic stem cell transplant is essential in
eradicating the primary cause of disease, facilitating donor cell engraftment and avoiding …

[HTML][HTML] Recent progress in interferon therapy for myeloid malignancies

FM Healy, LN Dahal, JRE Jones, Y Floisand… - Frontiers in …, 2021 - frontiersin.org
Myeloid malignancies are a heterogeneous group of clonal haematopoietic disorders, caused
by abnormalities in haematopoietic stem cells (HSCs) and myeloid progenitor cells that …

The excavation of a ring-ditch at Tye Field, Lawford, Essex

SJ Shennan, F Healy, IF Smith - Archaeological Journal, 1985 - Taylor & Francis
P82 I87 P84 I76 P9o 8I P94 49 P95 36 P98 34 PIOI: I66 PI03: I3I P106: 30, 31, 33, 35, 39
PI07: 14, I6

The effects of three-body interactions on crystal properties and defect energies in silver halides

RC Baetzold, CRA Catlow, J Corish, FM Healy… - Journal of Physics and …, 1989 - Elsevier
The currently available two-body interionic potentials for AgCl and AgBr may be used to
calculate the temperature dependence of the Frenkel defect formation energy in good …

[HTML][HTML] Hafnium oxide: A thin film dielectric with controllable etch resistance for semiconductor device fabrication

A Wratten, D Walker, E Khorani, BFM Healy, NE Grant… - AIP Advances, 2023 - pubs.aip.org
Thin film dielectrics are ubiquitous in the manufacture of electronic devices and are frequently
deposited and etched away at various stages of device fabrication. We demonstrate that …

Electronic band offset determination of oxides grown by atomic layer deposition on silicon

…, SL Pain, T Niewelt, BFM Healy… - IEEE Journal of …, 2023 - ieeexplore.ieee.org
Minimizing electrical losses at metal/silicon interfaces in high-efficiency single-junction silicon
solar cells requires the use of carrier-selective passivating contacts. The electronic barrier …

Quantifying photoluminescence variability in monolayer molybdenum disulfide films grown by chemical vapour deposition

BFM Healy, SL Pain, J Lloyd-Hughes… - Materials Research …, 2024 - iopscience.iop.org
Monolayer molybdenum disulfide (MoS 2) is a promising candidate for inclusion in
optoelectronic technologies, owing to its two-dimensional (2D) nature and resultant novel …

[HTML][HTML] Influence of co-reactants on surface passivation by nanoscale hafnium oxide layers grown by atomic layer deposition on silicon

…, A Yadav, T Niewelt, A Leimenstoll, BFM Healy… - RSC Applied …, 2024 - pubs.rsc.org
Hafnium oxide thin films have attracted considerable interest for passivation layers, protective
barriers, and anti-reflection coatings. Atomic layer deposition offers a route to produce …

[PDF][PDF] Effects of reduced airspeed for landing approach on flying qualities of a large jet transport equipped with powered lift

HL Crane, FM Healy, RW Sommer - 1968 - ntrs.nasa.gov
Effects of reduced landing speeds on flying qualities of Boeing 707 for simulated instrument
approaches