User profiles for F. M. Healy
Brendan FM HealyUniversity of Warwick Verified email at warwick.ac.uk Cited by 9 |
The importance of Ras in drug resistance in cancer
FM Healy, IA Prior, DJ MacEwan - British Journal of …, 2022 - Wiley Online Library
In this review, we analyse the impact of oncogenic Ras mutations in mediating cancer drug
resistance and the progress made in the abrogation of this resistance, through …
resistance and the progress made in the abrogation of this resistance, through …
[HTML][HTML] Worked to the bone: antibody-based conditioning as the future of transplant biology
JM Griffin, FM Healy, LN Dahal, Y Floisand… - Journal of Hematology & …, 2022 - Springer
Conditioning of the bone marrow prior to haematopoietic stem cell transplant is essential in
eradicating the primary cause of disease, facilitating donor cell engraftment and avoiding …
eradicating the primary cause of disease, facilitating donor cell engraftment and avoiding …
[HTML][HTML] Recent progress in interferon therapy for myeloid malignancies
FM Healy, LN Dahal, JRE Jones, Y Floisand… - Frontiers in …, 2021 - frontiersin.org
Myeloid malignancies are a heterogeneous group of clonal haematopoietic disorders, caused
by abnormalities in haematopoietic stem cells (HSCs) and myeloid progenitor cells that …
by abnormalities in haematopoietic stem cells (HSCs) and myeloid progenitor cells that …
The excavation of a ring-ditch at Tye Field, Lawford, Essex
SJ Shennan, F Healy, IF Smith - Archaeological Journal, 1985 - Taylor & Francis
P82 I87 P84 I76 P9o 8I P94 49 P95 36 P98 34 PIOI: I66 PI03: I3I P106: 30, 31, 33, 35, 39
PI07: 14, I6
PI07: 14, I6
The effects of three-body interactions on crystal properties and defect energies in silver halides
RC Baetzold, CRA Catlow, J Corish, FM Healy… - Journal of Physics and …, 1989 - Elsevier
The currently available two-body interionic potentials for AgCl and AgBr may be used to
calculate the temperature dependence of the Frenkel defect formation energy in good …
calculate the temperature dependence of the Frenkel defect formation energy in good …
[HTML][HTML] Hafnium oxide: A thin film dielectric with controllable etch resistance for semiconductor device fabrication
Thin film dielectrics are ubiquitous in the manufacture of electronic devices and are frequently
deposited and etched away at various stages of device fabrication. We demonstrate that …
deposited and etched away at various stages of device fabrication. We demonstrate that …
Electronic band offset determination of oxides grown by atomic layer deposition on silicon
Minimizing electrical losses at metal/silicon interfaces in high-efficiency single-junction silicon
solar cells requires the use of carrier-selective passivating contacts. The electronic barrier …
solar cells requires the use of carrier-selective passivating contacts. The electronic barrier …
Quantifying photoluminescence variability in monolayer molybdenum disulfide films grown by chemical vapour deposition
Monolayer molybdenum disulfide (MoS 2) is a promising candidate for inclusion in
optoelectronic technologies, owing to its two-dimensional (2D) nature and resultant novel …
optoelectronic technologies, owing to its two-dimensional (2D) nature and resultant novel …
[HTML][HTML] Influence of co-reactants on surface passivation by nanoscale hafnium oxide layers grown by atomic layer deposition on silicon
Hafnium oxide thin films have attracted considerable interest for passivation layers, protective
barriers, and anti-reflection coatings. Atomic layer deposition offers a route to produce …
barriers, and anti-reflection coatings. Atomic layer deposition offers a route to produce …
[PDF][PDF] Effects of reduced airspeed for landing approach on flying qualities of a large jet transport equipped with powered lift
HL Crane, FM Healy, RW Sommer - 1968 - ntrs.nasa.gov
Effects of reduced landing speeds on flying qualities of Boeing 707 for simulated instrument
approaches
approaches